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 Advanced Information
SPF-5043Z
Product Description
The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5043Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. High maximum input power specification make it ideal for high dynamic range receivers.
400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier
Pb
RoHS Compliant & Green Package
Gain and NF vs. Frequency Broadband Application Circuit
30 27 24 21 2.0 1.8 1.6
Gain (dB)
Gain
1.4
15 12 9 6 3 0 0 500 1000 1500 2000 2500
1.0 0.8
NF
0.6 0.4 0.2 0.0 3000
NF (dB)
18
1.2
Product Features * Ultra-Low Noise Figure = 0.6 dB @ 900 MHz * Gain = 18.5 dB @ 900 MHz * High Linearity: OIP3 = 35 dBm @ 1900 MHz * P1dB = 22 dBm @ 1900 MHz * Single-supply operation: 5V @ Idq=45mA * Broadband Internal Matching * RoHS/WEEE Compliant SOT-343 package Applications * Cellular, PCS, W-CDMA, ISM, W iMAX Receivers * Low noise, high linearity gain block applications
Frequency (MHz)
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
S21 NF OIP3 P1dB S11 S22 S12 VD IDQ Rth, j-l
Small Signal Power Gain Noise Figure Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Device Operating Voltage Device Operating Current (Quiescent) Thermal Resistance (junction-to-lead)
dB dB dBm dBm dB dB dB V mA C/W
0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz
18.3 13.4 0.65 0.70 32.5 34.5 21.0 21.8 -13.5 -14.5 -24.5 -19.5 -24.5 -20.0 5.0 45 125
Test Conditions: VS = 5.0V, IDQ = 45mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms, 25C, Broadband Application Circuit
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2006 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-105475 Rev B
Advanced Information SPF-5043Z GaAs Low Noise MMIC Amplifier
Typical RF Performance (with Broadband Application Circuit)
Symbol S21 NF OIP3 P1dB S11 S22 S12 Parameter Small Signal gain Noise Figure Output Third Order Intercept Point Output Power at 1dB compression Input Return Loss Output Return Loss Reverse Isolation
VS=5.0V IDQ=45mA
Unit dB dB dBm dBm dB dB dB
0.4 21.3 0.45 30.5 20.4 -11.0 -18.5 -26.0
0.8 18.9 0.60 31.5 20.7 -13.0 -23.5 -24.5
0.9 18.3 0.65 32.5 21.0 -13.5 -24.5 -24.5
TL = 25C
Frequency (GHz) 1.0 1.9 17.8 13.4 0.70 0.70 32.0 34.5 20.9 21.8 -13.5 -14.5 -24.5 -19.5 -24.5 -20.0
ZS = ZL = 50Ohms
2.2 12.2 0.85 34.5 22.3 -14.5 -18.5 -19.0
2.5 11.1 0.90 36.0 22.4 -14.0 -17.5 -18.0
3.0 9.6 1.05 36.5 22.6 -12.0 -17.0 -17.0
Test Conditions:
OIP3 Tone Spacing = 1MHz
Pout per tone = 0 dBm
Reliability & Qualification Information Parameter Rating ESD Rating - Human Body Model (HBM) Class 1A Moisture Sensitivity (MSL) MSL 1 This product qualification report can be downloaded at: www.sirenza.com
Absolute Maximum Ratings Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. Absolute Limit 60mA 5.5V 25dBm 330mW 150C -40 to +85C -65 to +150C
Typical Performance (with Broadband Application Circuit)
DCIV Over Temperature
60 50 40 mA 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
25C -40C 85C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=Source lead Temperature
Caution: ESD sensitive
VD
Appropriate precautions in handling, packaging and testing devices must be observed.
IM3 vs. Power
OIP3 vs. Frequency
44 42 Pout = 0dBm /Tone, 1MHz Spacing 40 38 25C -40C 85C
-30 -35 -40 -45 fc = 900MHz, 1MHz Spacing
dBc
dBm
36 34 32 30 28 0 500 1000 1500 2000 2500 3000
-50 -55
25C
-60 -65 -70 0 3 6 9
-40C 85C
12
15
Frequency (MHz)
Power Output Per Tone (dBm)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-105475 Rev B
Advanced Information SPF-5043Z GaAs Low Noise MMIC Amplifier
Typical RF Performance (Broadband Application Circuit, 5V, 45mA)
|S11| vs. Frequency
0 -5 -10
|S21| vs. Frequency
25
20
15
dB
-15 -20 -25 -30 0 500 1000 1500 2000 2500 3000
dB
10
-40C 25C 85C
5
-40C 25C 85C
0 0 500 1000 1500 2000 2500 3000
Frequency (MHz)
Frequency (MHz)
|S12| vs. Frequency
0 -5
-40C
|S22| vs. Frequency
0 -5
-40C 25C 85C
-10
25C 85C
-10
dB
-15 -20 -25 -30 0 500 1000 1500 2000 2500 3000
dB
-15 -20 -25 -30 0 500 1000 1500 2000 2500 3000
Frequency (MHz)
Noise Figure vs. Frequency
2.00 1.75
25C
Frequency (MHz)
P1dB vs. Frequency
25 24 23 22 21
1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 500
85C
dBm
dB
20 19 18 17 16 15
2 5C -40C 8 5C
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Frequency (MHz)
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-105475 Rev B
Advanced Information SPF-5043Z GaAs Low Noise MMIC Amplifier
Typical Performance De-embedded S-parameters (5V, 45mA)
30 25 20
Gmax S21
Max Gain vs. Frequency
Gain (dB)
15 10 5 0 -5 0 2 4 6 8 10 12 S21 Gmax
Frequency (GHz)
S11 vs. Frequency
S22 vs. Frequency
6 GHz 4 GHz 3.5 GHz 3 GHz 2.5 GHz 2 GHz 1.5 GHz 1 GHz .5 GHz .05 GHz 8 GHz 8 GHz 10 GHz 12 GHz
10 GHz
6 GHz
1 GHz 2 GHz 3 GHz 4 GHz
12 GHz
.05 GHz
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-105475 Rev B
Advanced Information SPF-5043Z GaAs Low Noise MMIC Amplifier
Broadband Application Circuit Schematic (400 - 3000MHz)
Vs 0.1uF 100pF
100nH 3 RF in 100pF 2,4
SPF-5043Z
1 RF out 100pF
Evaluation Board Layout
Bill of Materials C1 C2 C3 C4 L1 1x TAJB104KLRH Rohm 0.1uF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF 1x MCH185A101JK Rohm 100pF 1x LL1608-FSR10J Toko 100nH
C1 C2 C3 L1 C4
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-105475 Rev B
Advanced Information SPF-5043Z GaAs Low Noise MMIC Amplifier
Pad # Function Description
1 2,4 3
RFOUT / Bias GND RFIN
RF output and Bias pin. This pin is DC coupled and matched to 50 Ohms. Bias is applied through this pad. Connection to ground RF input pin. This pin is DC coupled and matched to 50 Ohms. An external DC block is required.
Part Number Ordering Information
Part Number Reel Size Devices/Reel
Suggested Pad Layout
SPF-5043Z
7"
3000
Part Identification
4
3
50Z
1 2
D e 4 e 3 L
SYMBOL E D HE MIN 1.15 1.85 1.80 0.80 0.80 0.00 0.10 MAX 1.35 2.25 2.40 1.10 1.00 0.10 0.40
Nominal Package Dimensions
Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances.
HE
C L
E
A A2 A1
1 b
C L
Q1 b1 2 C
Q1 e b b1 c L
0.65 BSC 0.25 0.55 0.10 0.10 0.40 0.70 0.18 0.30
NOTE: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH & METAL BURR. 4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70. 5. DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM. ie :REVERSE TRIM/FORM. 6. PACKAGE SURFACE TO BE MIRROR FINISH.
A2
A A1
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-105475 Rev B


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